Fairchild Semiconductor fdn357n free download

File name fdn357n.pdf

March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode power 1.9 A, 30 V, RDS(ON) = 0.090 @ VGS = 4.5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.060 @ VGS = 10 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state Industry standard outline SOT-23 surface mount resistance. These devices are particularly suited for low voltage package using proprietary SuperSOTTM-3 design for applications in notebook computers, portable phones, PCMCIA superior thermal and electrical capabilities. cards, and other battery powered circuits where fast High density cell design for extremely low RDS(ON). switching, and low in-line power loss are needed in a very small outline surface mount package. Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D 7 35 S SuperSOT -3 TM G G S Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter FDN357N Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous